Light emission from intrinsic and doped silicon-rich silicon oxide: From the visible to 1.6 mu m

Silicon-rich silicon oxide (SRSO) films were prepared by thermal oxidation (700 degrees C-950 degrees C) of electrochemically etched crystalline silicon (c-Si). The annealing-oxidation conditions are responsible for the chemical and structural modification of SRSO as well as for the intrinsic light-emission in the visible and near infra-red spectral regions (2.0-1.8 eV, 1.6 eV and 1.1 eV). The extrinsic photoluminescence (PL) is produced by doping (via electroplating or ion implantation) with rare-earth (R-E) ions (Nd at 1.06 mu m, Er at 1.5 mu m) and chalcogens (S at similar to 1.6 mu m) The impurities can be localized within the Si grains (S), in the SiO matrix (Nd, Er) or at the Si-SiO interface (Er). The Er-related PL in SRSO was studied in detail: the maximum PL external quantum efficiency (EQE) of 0.01-0.1% was found in samples annealed at 900 degrees C in diluted oxygen (similar to 10% in N-2). The integrated PL temperature dependence is weak from 12K to 300K. Light emitting diodes (LEDs) with an active layer made of an intrinsic and doped SRSO are manufactured and studied: room temperature electroluminescence (EL) from the visible to 1.6 mu m has been demonstrated.