MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

被引：1199

作者：

Lee, Hee Sung ^{[1
]}

Min, Sung-Wook ^{[1
]}

Chang, Youn-Gyung ^{[1
]}

Park, Min Kyu ^{[3
]}

Nam, Taewook ^{[2
]}

Kim, Hyungjun ^{[2
]}

Kim, Jae Hoon ^{[1
]}

Ryu, Sunmin ^{[3
]}

Im, Seongil ^{[1
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[3] Kyung Hee Univ, Dept Appl Chem, Yongin 446701, Gyeonggi, South Korea

来源：

NANO LETTERS | 2012年 / 12卷 / 07期

关键词：

MoS2; phototransistor; photoresponse; energy gap; PHOTOLUMINESCENCE; STATES;

D O I：

10.1021/nl301485q

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on the fabrication of top-gate phototransistors based on a few-layered MoS2 nanosheet with a transparent gate electrode. Our devices with triple MoS2 layers exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection. The varied functionalities are attributed to energy gap modulation by the number of MoS2 layers. The photoelectric probing on working transistors with the nanosheets demonstrates that single-layer MoS2 has a significant energy bandgap of 1.8 eV, while those of double- and triple-layer MoS2 reduce to 1.65 and 1.35 eV, respectively.

引用

页码：3695 / 3700

页数：6

共 50 条

[1] Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance
Min, Sung-Wook
Lee, Hee Sung
Choi, Hyoung Joon
Park, Min Kyu
Nam, Taewook
Kim, Hyungjun
Ryu, Sunmin
Im, Seongil
[J]. NANOSCALE, 2013, 5 (02) : 548 - 551
[2] Growth of Large-Scale and Thickness-Modulated MoS2 Nanosheets
Choudhary, Nitin
Park, Juhong
Hwang, Jun Yeon
Choi, Wonbong
[J]. ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (23) : 21215 - 21222
[3] Single-Gate MoS2 Tunnel FET with a Thickness-Modulated Homojunction
Fukui, Tomohiro
Nishimura, Tomonori
Miyata, Yasumitsu
Ueno, Keiji
Taniguchi, Takashi
Watanabe, Kenji
Nagashio, Kosuke
[J]. ACS APPLIED MATERIALS & INTERFACES, 2024, 16 (07) : 8993 - 9001
[4] Large Lateral Photovoltage Observed in MoS2 Thickness-Modulated ITO/MoS2/p-Si Heterojunctions
Qiao, Shuang
Zhang, Bin
Feng, Kaiyu
Cong, Ridong
Yu, Wei
Fu, Guangsheng
Wang, Shufang
[J]. ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (21) : 18377 - 18387
[5] Thickness-modulated lateral MoS2 diodes with sub-terahertz cutoff frequency
Askar, Abdelrahman M.
Saeed, Mohamed
Hamed, Ahmed
Negra, Renato
Adachi, Michael M.
[J]. NANOSCALE, 2021, 13 (19) : 8940 - 8947
[6] Contact-Lifted Thickness-Modulated MoS2 Diodes for Gate-Controlled Electronic Applications
Yarrow, Bud
Askar, Abdelrahman M.
Parameswaran, Ash M.
Adachi, Michael M.
[J]. ACS APPLIED ELECTRONIC MATERIALS, 2019, 1 (10): : 2150 - 2156
[7] Thickness-modulated waveguides for integrated optical sensing
Cottier, K
Kunz, RE
Voirin, G
Wiki, M
[J]. OPTICAL FIBERS AND SENSORS FOR MEDICAL APPLICATIONS II, 2002, 4616 : 53 - 63
[8] Thickness-modulated and interface-engineered MoS2/TiO2 heterostructures as a highly active and inexpensive cathode for reverse electrodialysis
Jeong, Namjo
Kim, Han-ki
Kim, Won-sik
Choi, Ji Yeon
Yang, SeungCheol
Hwang, Kyo-sik
Nam, Joo-youn
Han, Ji-hyung
Jwa, Eun-Jin
Park, Soon-Chul
[J]. APPLIED SURFACE SCIENCE, 2020, 504
[9] Silver Nanoparticles Decorated Wide Band Gap MoS2 Nanosheet: Enhanced Optical and Electrical Properties
Gogoi, Priyanku
Deb, Sulochana
[J]. PLASMONICS, 2024,
[10] A study on ionic gated MoS2 phototransistors
Wu, Binmin
Wang, Xudong
Tang, Hongwei
Lin, Tie
Shen, Hong
Hu, Weida
Meng, Xiangjian
Bao, Wenzhong
Wang, Jianlu
Chu, Junhao
[J]. SCIENCE CHINA-INFORMATION SCIENCES, 2019, 62 (12)

← 1 2 3 4 5 →