An Injection-Lockable InP-DHBT Source Operating at 421 GHz with-2.4 dBm Output Power and 1.7% DC-to-RF Efficiency

被引：2

作者：

Possberg, Alexander ^{[1
]}

Vogelsang, Florian ^{[2
]}

Pohl, Nils ^{[2
]}

Hossain, Maruf ^{[3
]}

Yacoub, Hady ^{[3
]}

Johansen, Tom K. ^{[3
,4
]}

Heinrich, Wolfgang ^{[3
]}

Weimann, Nils ^{[1
,3
]}

机构：

[1] Univ Duisburg Essen, Dept High Frequency Components, Duisburg, Germany

[2] Ruhr Univ Bochum, Inst Integrated Syst, Bochum, Germany

[3] Ferdinand Braun Inst FBH, Berlin, Germany

[4] Tech Univ Denmark, Lyngby, Denmark

来源：

2022 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS 2022) | 2022年

关键词：

InP; HBT; Injection Locking; Oscillator; MMIC; sub-THz; THz; THZ;

D O I：

10.1109/IMS37962.2022.9865468

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, an injection-lockable push-push oscillator operating at 421 GHz is presented. The circuit is based on a 0.5 mu m transferred substrate InP DHBT MMIC process. A peak output power of -2.4 dBm is measured at 34.6 mW DC-power consumption, resulting in 1.7% DC-to-RF conversion efficiency. The oscillator can be injection-locked through a dedicated locking port which, along with the compact core measuring 0.53 x 0.49 mm(2), makes this design suitable for efficient injection-locked oscillator arrays comprising a beam steering function by phase tuning.

引用

页码：336 / 339

页数：4

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