Research on III-V compound semiconductor based optoelectronic devices

被引：2
|
作者：
Luo, Y [1 ]
Sun, C [1 ]
Hao, Z [1 ]
Han, Y [1 ]
Xiong, B [1 ]
Guo, W [1 ]
Wu, T [1 ]
机构：
[1] Tsing Hua Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Beijing 100084, Peoples R China
来源：
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM | 2003年
关键词：
D O I：
10.1109/COS.2003.1278153
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this talk, we shall present research activities on compound semiconductor based optoelectronic devices in State Key Lab on Integrated Optoelectronics, Tsinghua University. The presentation will cover high-speed electroabsorption (EA) modulator integrated distributed feedback (DFB) lasers for trunk line fiber communications, growth of InAsP/InGaAsP multiple-quantum-well (MQW) structures by all-solid-source molecular beam epitaxy (SSMBE) system, and the work on GaN based blue light emitting devices.
引用
收藏
页码：11 / 14
页数：4
相关论文
共 50 条
  • [1] III-V compound SC for optoelectronic devices
    Mokkapati, Sudha
    Jagadish, Chennupati
    [J]. MATERIALS TODAY, 2009, 12 (04) : 22 - 32
  • [2] Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
    Gao, Q.
    Joyce, H. J.
    Paiman, S.
    Tan, H. H.
    Kim, Y.
    Smith, L. M.
    Jackson, H. E.
    Yarrison-Rice, J. M.
    Zhang, X.
    Zou, J.
    Jagadish, C.
    [J]. 2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009), 2009, : 676 - +
  • [3] III-V OPTOELECTRONIC DEVICES
    KRESSEL, H
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C94 - C94
  • [4] Heteroepitaxial growth of III-V compound semiconductors for optoelectronic devices
    Egawa, T
    Ishikawa, H
    Jimbo, T
    Umeno, M
    [J]. BULLETIN OF MATERIALS SCIENCE, 1999, 22 (03) : 363 - 367
  • [5] DEGRADATION OF III-V OPTOELECTRONIC DEVICES
    UEDA, O
    YAMAKOSHI, S
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : C177 - C177
  • [6] III-V Compound Semiconductor Nanowires
    Joyce, H. J.
    Paiman, S.
    Gao, Q.
    Tan, H. H.
    Kim, Y.
    Smith, L. M.
    Jackson, H. E.
    Yarrison-Rice, J. M.
    Zhang, X.
    Zou, J.
    Jagadish, C.
    [J]. 2009 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE, 2009, : 59 - +
  • [7] III-V Compound Semiconductor Nanowires
    Paiman, S.
    Joyce, H. J.
    Kang, J. H.
    Gao, Q.
    Tan, H. H.
    Kim, Y.
    Zhang, X.
    Zou, J.
    Jagadish, C.
    [J]. 2009 9TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2009, : 155 - +
  • [8] FABRICATION TECHNOLOGIES FOR III-V COMPOUND SEMICONDUCTOR PHOTONIC AND ELECTRONIC DEVICES
    DAUTREMONTSMITH, WC
    MCCOY, RJ
    BURTON, RH
    BACA, AG
    [J]. AT&T TECHNICAL JOURNAL, 1989, 68 (01): : 64 - 82
  • [9] III-V COMPOUND SEMICONDUCTOR-DEVICES - OPTICAL-DETECTORS
    STILLMAN, GE
    ROBBINS, VM
    TABATABAIE, N
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (11) : 1643 - 1655
  • [10] Quantum devices based on III-V compound semiconductors
    Hasegawa, H
    Fujikura, H
    Okada, H
    [J]. PHYSICS AND APPLICATIONS OF SEMICONDUCTOR QUANTUM STRUCTURES, 2001, : 387 - 432
12345