High-performance two-dimensional transistors and circuits

Two-dimensional materials are regarded as one of the most promising solutions for next-generation electronics and optoelectronics. Here, we report the electronic devices and circuits based on two-dimensional material for radio frequency and logic applications. Improved devices current saturation in black phosphorus and bilayer graphene high frequency transistors operating in GHz region show high f(max)/f(T) and f(T)L(g) values. Furthermore, we design and fabricate complementary logic inverters based on p-type black phosphorus and n-type molybdenum disulfide transistors, which can be operated in both binary inverter and tunable ternary inverters, where the output logic state and window of the mid-logic can be controlled by specific pairs of black phosphorus and molybdenum disulfide transistors.