High-aspect-ratio silicon dioxide pillars

被引：25

作者：

Trifonov, T

Rodríguez, A

Servera, F

Marsal, LF

Pallarès, J

Alcubilla, R

机构：

[1] Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, ETSE, Tarragona 43007, Spain

[2] Univ Politecn Catalunya, Dept Elect Engn, Barcelona 08074, Spain

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 08期

关键词：

D O I：

10.1002/pssa.200461205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents a technique for fabricating high-aspect-ratio silicon dioxide pillars by electrochemical etching of n-type silicon in hydrofluoric acid (HF) solutions. Basic process flow and etching conditions are described, which make it possible to obtain high-aspect-ratio pillar arrays with good uniformity. Pillar arrays of different dimensions (i.e. diameter and separation) and of different arrangements can be produced in a single etch step on the same wafer. The large surface area makes these pillar arrays possible candidates for applications in biological sensing. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1634 / 1638

页数：5

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