Features of titanium oxide memristor fabrication by pulsed laser deposition

被引：2
|
作者：
Maslova, Natalia [1 ]
Khrapovitskaya, Yulia [1 ]
Sokolov, Ivan [1 ]
Grishchenko, Yulia [1 ]
Mamichev, Dmitry [1 ]
Zanaveskin, Maxim [1 ]
机构：
[1] NRC Kurchatov Inst, Moscow 123182, Russia
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 1-2 | 2015年 / 12卷 / 1-2期
关键词：
titanium oxide; memristor; pulsed laser deposition; non-volatile memory;
D O I：
10.1002/pssc.201400110
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The structural and electrophysical properties of titanium oxide based memristor obtained by pulsed laser deposition were analysed. The experimental results found the possibility of fine tuning of memristor active layers stoichiometry during deposition. In addition, the atomic force microscopy analysis of the surface of titanium oxide films revealed its high morphological homogeneity and continuity. The obtained memristors with gold contacts have been possessed bipolar switching mechanism and high endurance. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：242 / 245
页数：4
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