Magneto-transport properties of [Co/Bi]n wire structures

被引：2
|
作者：
Christides, C. [1 ]
Speliotis, Th. [1 ,2 ]
Chatzichristidi, M. [1 ,3 ]
Raptis, I. [3 ]
机构：
[1] Univ Patras, Dept Engn Sci, Patras 26504, Greece
[2] NCSR Demokritos, Inst Mat Sci, Athens 15310, Greece
[3] NCSR Demokritos, Inst Microelect, Athens 15310, Greece
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2008年 / 320卷 / 20期
关键词：
magnetic multilayer; magneto-transport effect; galvanomagnetic effect; magnetization curve; magnetic device;
D O I：
10.1016/j.jmmm.2008.04.080
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The present study examines the artificial control of grain-boundary resistance and its contribution to the magneto-transport properties of [Co(1 nm)/Bi(2.5 nm)](n) (n =10 or 20) line structures on the Si( 0 0 1)/SiN(x) substrate. Conventional patterning and deposition processes are applied for the fabrication of a device that consists of five-line structures with a line width of 2 mm. A DR/ R 80% ratio was observed in the five-line structure of [Co(1 nm)/Bi(2.5 nm)] 10 multilayers at 10 K. Our measurements indicate that grain- boundary effects can be associated with the large DR/ R ratio of transverse magnetoresistance. (C) 2008 Elsevier B. V. All rights reserved.
引用
收藏
页码：E720 / E724
页数：5
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