Novel mid-infrared laser designs based on intraband and interband carrier transitions in quantum wells

被引：0
|
作者：
Vorobjev, LE [1 ]
Firsov, DA [1 ]
Zegrya, GG [1 ]
Zerova, VL [1 ]
Towe, E [1 ]
Cockburn, JW [1 ]
Krasil'nik, ZF [1 ]
机构：
[1] St Petersburg State Univ, St Petersburg 195251, Russia
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Two new types of mid infrared injection lasers containing quantum wells of asymmetrical funnel shape are proposed. Inversion of population arises between the third and the second levels of size quantization due to special potential profile of quantum well providing long electron lifetime on third excited level. Depopulation of the ground level is realized with intensive interband stimulated radiation generated in the same structure ("two-color laser", quantum wells are embedded into i-layer of diode laser structure) or due to resonant electron-hole Auger scattering in type II Sb-containing heterostructures ("Auger laser").
引用
收藏
页码：733 / 734
页数：2
相关论文
共 50 条
  • [1] Injection mid-infrared heterolasers based on intraband carrier transitions in quantum wells and quantum dots
    Vorobjev, LE
    Firsov, DA
    Shalygin, VA
    Tulupenko, VN
    Ledentsov, NN
    Ustinov, VM
    Alferov, ZI
    [J]. IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 2000, 64 (02): : 294 - 298
  • [2] Mid-infrared range Augerlaser, based on intersubband transitions of carriers in quantum wells
    Vorobjev, LE
    Zegrya, GG
    Firsov, DA
    [J]. IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 2001, 65 (02): : 230 - 232
  • [3] Mid-infrared range Augerlaser, based on intersubband transitions of carriers in quantum wells
    Vorob'ev, L.E.
    Zegrya, G.G.
    Firsov, D.A.
    [J]. Izvestiya Akademii Nauk. Ser. Fizicheskaya, 2001, 65 (02): : 230 - 233
  • [4] Theoretical investigation of mid-infrared interband cascade lasers based on type II quantum wells
    Mu, YM
    Yang, RQ
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) : 5357 - 5359
  • [5] Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers
    Sek, G.
    Janiak, F.
    Motyka, M.
    Ryczko, K.
    Misiewicz, J.
    Bauer, A.
    Hoefling, S.
    Forchel, A.
    [J]. OPTICAL MATERIALS, 2011, 33 (11) : 1817 - 1819
  • [6] Mid-infrared intraband transitions in self-organized InAs/GaAs quantum dots
    Boucaud, P
    Sauvage, S
    Julien, FH
    Gerard, JM
    Thierry-Mieg, V
    Marzin, JY
    [J]. LONG WAVELENGTH INFRARED DETECTORS AND ARRAYS: PHYSICS AND APPLICATIONS V, 1997, 33 : 144 - 155
  • [7] High power mid-infrared interband cascade lasers based on type-II quantum wells
    Yang, RQ
    Yang, BH
    Zhang, D
    Lin, CH
    Murry, SJ
    Wu, H
    Pei, SS
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (17) : 2409 - 2411
  • [8] Intraband dynamics of mid-infrared HgTe quantum dots
    Ruppert, Matthias
    Bui, Hanh
    Sagar, Laxmi Kishore
    Geiregat, Pieter
    Hens, Zeger
    Bester, Gabriel
    Huse, Nils
    [J]. NANOSCALE, 2022, 14 (11) : 4123 - 4130
  • [9] Interband and intraband relaxation dynamics in InSb based quantum wells
    Bhowmick, M.
    Khodaparast, G. A.
    Mishima, T. D.
    Santos, M. B.
    Saha, D.
    Sanders, G.
    Stanton, C. J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2016, 120 (23)
  • [10] Mid-infrared Ring Interband Cascade Laser: Operation at the Standard Quantum Limit
    Marschick, Georg
    Pelini, Jacopo
    Gabbrielli, Tecla
    Cappelli, Francesco
    Weih, Robert
    Knoetig, Hedwig
    Koeth, Johannes
    Hoefling, Sven
    De Natale, Paolo
    Strasser, Gottfried
    Borri, Simone
    Hinkov, Borislav
    [J]. ACS PHOTONICS, 2024, 11 (02): : 395 - 403
12345