Hydrodynamic modeling of RF noise in CMOS devices

被引：0

作者：

Jungemann, C ^{[1
]}

Neinhüs, B ^{[1
]}

Nguyen, CD ^{[1
]}

Meinerzhagen, B ^{[1
]}

Dutton, RW ^{[1
]}

Scholten, AJ ^{[1
]}

Tiemeijer, LF ^{[1
]}

机构：

[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST | 2003年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The first hydrodynamic RF noise model for CMOS devices including a consistent set of quantum correction and mobility models for the inversion layer is presented. Good agreement of simulations and recent noise measurements for deep sub-micron devices is obtained. In the case of classical and non-classical CMOS devices with channel lengths of 50nm it is found that the drain excess noise factor is still below two and the increase in drain noise for short channel devices is therefore not as dramatic as previously reported.

引用

页码：871 / 874

页数：4

共 50 条

[1] Modeling Passive Devices for CMOS RF Circuits
Valdes, Jose
Torres, Reydezel
Murphy, Roberto
PROCEEDINGS OF THE 28TH INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (MIXDES 2021), 2021, : 20 - 24
[2] Noise modeling for RF CMOS circuit simulation
Scholten, AJ
Tiemeijer, LF
van Langevelde, R
Havens, RJ
Zegers-van Duijnhoven, ATA
Venezia, VC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (03) : 618 - 632
[3] Extraction of noise source from noise parameters with RF CMOS devices
Kao, YH
Hsu, MT
Hsu, YM
APMC 2001: ASIA-PACIFIC MICROWAVE CONFERENCE, VOLS 1-3, PROCEEDINGS, 2001, : 1326 - 1329
[4] Physical mechanism of NBTI relaxation by RF and noise performance of RF CMOS devices
Luo, ZY
Walko, JP
2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL, 2005, : 712 - 713
[5] Compact modeling of noise for RF CMOS circuit design
Scholten, AJ
Tiemeijer, LF
van Langevelde, R
Havens, RJ
Zegers-van Duijnhoven, ATA
de Kort, R
Venezia, VC
Klaassen, DBM
NOISE IN DEVICES AND CIRCUITS, 2003, 5113 : 93 - 104
[6] RF-Noise Modeling in Advanced CMOS Technologies
Smit, Geert D. J.
Scholten, Andries J.
Pijper, Ralf M. T.
Tiemeijer, Luuk F.
van der Toorn, Ramses
Klaassen, Dirk B. M.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (02) : 245 - 254
[7] Numerical modeling of RF noise in scaled MOS devices
Jungemann, C
Neinhüs, B
Nguyen, CD
Scholten, AJ
Tiemeijer, LF
Meinerzhagen, B
SOLID-STATE ELECTRONICS, 2006, 50 (01) : 10 - 17
[8] CMOS RF Noise, Scaling, and Compact Modeling for RFIC Design
Antonopoulos, Angelos
Bucher, Matthias
Papathanasiou, Konstantinos
Makris, Nikolaos
Sharma, Rupendra K.
Sakalas, Paulius
Schroter, Michael
2013 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2013, : 53 - 56
[9] Modeling and Simulation of Substrate Noise in Integrated RF CMOS Circuits
Lin, L.
Xiong, J.
Mathis, W.
ADVANCES IN RADIO SCIENCE, 2009, 7 : 163 - 168
[10] Compact modeling of drain and gate current noise for RF CMOS
Scholten, AJ
Tiemeijer, LF
van Langevelde, R
Havens, RJ
Venezia, VC
Zegers-Van Duijnhoven, ATA
Neinhüs, B
Jungemann, C
Klaassen, DBM
INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, 2002, : 129 - 132

← 1 2 3 4 5 →