Electronic Properties of Black Phosphorene via Si induced Quantum Dot

被引：0

作者：

Thakur, Rajesh ^{[1
]}

Mohan, Brij ^{[1
]}

Sharma, Munish ^{[1
]}

Sharma, Raman ^{[1
]}

机构：

[1] Himachal Pradesh Univ, Dept Phys, Shimla 171005, HP, India

来源：

61ST DAE-SOLID STATE PHYSICS SYMPOSIUM | 2017年 / 1832卷

关键词：

DFT; phosphorene; band-structure; quantum dot;

D O I：

10.1063/1.4980367

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

First principal study of structural and electronic properties of black phosphorene with Si induced quantum dot (QD) has been investigated within density functional theory (DFT). Electronic band structure and corresponding density of states (DOS) show the drastic decrease in band gap in the presence of the quantum dot. A band gap of 1.08 eV in pristine black phosphorene has been reduced to 0.07 eV by creation of a Si induced QD. An induced magnetic moment of 1.2 mu(B) has also been observed for phosphorene containing this quantum dot, a possible way of tailoring properties of black phosphorene.

引用

页数：3

共 50 条

[1] Electronic properties and optical absorption of a phosphorene quantum dot
Liang, F. X.
Ren, Y. H.
Zhang, X. D.
Jiang, Z. T.
[J]. JOURNAL OF APPLIED PHYSICS, 2018, 123 (12)
[2] Phosphorene quantum dot electronic properties and gas sensing
Abdelsalam, Hazem
Saroka, Vasil A.
Younis, Waleed Othman
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2019, 107 : 105 - 109
[3] Bandgap engineering and electronic properties of phosphorene quantum dot nanoribbons
Sardarzadeh, Shima
Karamdel, Javad
Nayebi, Payman
[J]. MATERIALS RESEARCH EXPRESS, 2019, 6 (10):
[4] Electronic and structural properties of black phosphorene doped with Si, B and N
Goulart, Luiza
Fernandes, Liana da S.
dos Santos, Claudia Lange
Rossato, Jussane
[J]. PHYSICS LETTERS A, 2019, 383 (32)
[5] Anisotropic basic electronic properties of strained black phosphorene
Yarmohammadi, Mohsen
Mortezaei, Mohammad
Mirabbaszadeh, Kavoos
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2020, 124
[6] Quantum manifestations in electronic properties of bilayer phosphorene nanoribbons
Zhang, Jiao
Li, Shi-Qi
Liu, Hongsheng
Li, Mengke
Gao, Junfeng
[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2023, 25 (02) : 1214 - 1219
[7] Electrostatic quantum dot confinement in phosphorene
Szafran, Bartlomiej
[J]. PHYSICAL REVIEW B, 2020, 101 (23)
[8] Tuning the electronic properties of bilayer black phosphorene with the twist angle
Liu, Nanshu
Zhang, Junfeng
Zhou, Si
Zhao, Jijun
[J]. JOURNAL OF MATERIALS CHEMISTRY C, 2020, 8 (18) : 6264 - 6272
[9] Bending deformation regulates the electronic and optical properties of black phosphorene
Mu, Guang-Yao
Liu, Gui-Li
Zhang, Guo-Ying
[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2020, 34 (20):
[10] Electronic and magnetic properties of doped black phosphorene with concentration dependence
Wang, Ke
Wang, Hai
Zhang, Min
Liu, Yan
Zhao, Wei
[J]. Beilstein Journal of Nanotechnology, 2019, 10 : 993 - 1001

← 1 2 3 4 5 →