The variance law and scattering mechanism of charge carriers in Zn-doped p-In0.5Ga0.5Sb

被引：0
|
作者：
Zeynalov, C. A. [1 ]
Aliev, F. F. [1 ]
Damirova, S. Z. [1 ]
Tairov, B. A. [1 ]
机构：
[1] Natl Acad Sci Azerbaijan, Inst Phys, AZ-1143 Baku, Azerbaijan
来源：
SEMICONDUCTORS | 2010年 / 44卷 / 09期
关键词：
GAXIN1-XSB ALLOYS;
D O I：
10.1134/S1063782610090071
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Temperature dependences of the electrical conductivity, Hall coefficient, and thermoelectric power of Zn-doped alloys of the equimolar composition In0.5Ga0.5Sb are studied. The concentration and temperature dependences of the effective mass of holes are determined. It is shown that, for all doped samples at T < 200 K, the charge carriers are scattered by impurity ions and, at T > 200 K, scattering by lattice vibrations also introduces a substantial contribution.
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收藏
页码：1149 / 1152
页数：4
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