Three-dimensional geometry of nanometer-scale AlN pits: A new template for quantum dots?

被引：6
|
作者：
Liu, Fude [1 ]
Collazo, Ramon [1 ]
Mita, Seiji [1 ]
Sitar, Zlatko [1 ]
Duscher, Gerd [1 ,2 ]
机构：
[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27606 USA
[2] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
来源：
ADVANCED MATERIALS | 2008年 / 20卷 / 01期
关键词：
D O I：
10.1002/adma.200701288
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The exact 3D geometry of nanometer-scale AIN pits is determined by Z-contrast imaging. The figure shows the 3D geometry of an AIN nano-pit and its corresponding GaN quantum dot. An atomic-resolution Z-contrast image is displayed in false color to clearly show the Z-contrast of the image, while the other panel displays a schematic 3D view.
引用
收藏
页码：134 / +
页数：5
相关论文
共 50 条
  • [1] Three-dimensional nanometer-scale optical cavities of indefinite medium
    Yao, Jie
    Yang, Xiaodong
    Yin, Xiaobo
    Bartal, Guy
    Zhang, Xiang
    PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2011, 108 (28) : 11327 - 11331
  • [2] Three-Dimensional Fine Structure of Nanometer-Scale Nafion Thin Films
    Peltonen, A.
    Etula, J.
    Seitsonen, J.
    Engelhardt, P.
    Laurila, T.
    ACS APPLIED POLYMER MATERIALS, 2021, 3 (02) : 1078 - 1086
  • [3] Proposal for a three-dimensional magnetic measurement method with nanometer-scale depth resolution
    Negi, Devendra
    Jones, Lewys
    Idrobo, Juan-Carlos
    Rusz, Jan
    PHYSICAL REVIEW B, 2018, 98 (17)
  • [4] Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots
    Dasika, V. D.
    Goldman, R. S.
    Song, J. D.
    Choi, W. J.
    Cho, N. K.
    Lee, J. I.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (01)
  • [5] Carrier Localization in GaN/AlN Quantum Dots As Revealed by Three-Dimensional Multimicroscopy
    Mancini, Lorenzo
    Moyon, Florian
    Hernandez-Maldonado, David
    Blum, Ivan
    Houard, Jonathan
    Lefebvre, Williams
    Vurpillot, Francois
    Das, Aparna
    Monroy, Eva
    Rigutti, Lorenzo
    NANO LETTERS, 2017, 17 (07) : 4261 - 4269
  • [6] Nanometer-scale selective epitaxy of InAs quantum dots via indium segregation
    Yeoh, TS
    Elarde, VC
    Swint, RB
    Wu, ER
    Coleman, JJ
    2003 THIRD IEEE CONFERENCE ON NANOTECHNOLOGY, VOLS ONE AND TWO, PROCEEDINGS, 2003, : 484 - 485
  • [7] MOCVD growth of nanometer-scale InGaN self-assembling quantum dots
    Tachibana, K
    Someya, T
    Arakawa, Y
    COMPOUND SEMICONDUCTORS 1998, 1999, (162): : 735 - 739
  • [8] Three-dimensional strain field calculations in multiple InN/AlN wurtzite quantum dots
    Jogai, B
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (02) : 699 - 704
  • [9] Quantum interferometry with three-dimensional geometry
    Spagnolo, Nicolo
    Aparo, Lorenzo
    Vitelli, Chiara
    Crespi, Andrea
    Ramponi, Roberta
    Osellame, Roberto
    Mataloni, Paolo
    Sciarrino, Fabio
    SCIENTIFIC REPORTS, 2012, 2
  • [10] Quantum interferometry with three-dimensional geometry
    Nicolò Spagnolo
    Lorenzo Aparo
    Chiara Vitelli
    Andrea Crespi
    Roberta Ramponi
    Roberto Osellame
    Paolo Mataloni
    Fabio Sciarrino
    Scientific Reports, 2
12345