In situ stress relaxation and diffraction studies across the metal-insulator transition in epitaxial and polycrystalline SmNiO3 thin films

被引：7
|
作者：
Viswanath, B. [1 ]
Aydogdu, G. H. [1 ]
Ha, S. D. [1 ]
Ramanathan, S. [1 ]
机构：
[1] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA
来源：
SCRIPTA MATERIALIA | 2012年 / 66卷 / 07期
关键词：
Phase transformation; Stress relaxation; Metal-insulator transition; Thin films; Oxides; NEUTRON-DIFFRACTION;
D O I：
10.1016/j.scriptamat.2011.12.018
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigate structure and stress relaxation in situ across the metal insulator transition in SmNiO3 thin films. An epitaxial thin film of SmNiO3 grown on LaAlO3 single crystal shows a metal insulator transition at 155 degrees C based on electrical measurements. In situ electron diffraction experiments do not show any noticeable change with temperature. SmNiO3 thin films grown on silicon show a smoothly varying compressive stress across the transition boundary. The experimental observation of a metal insulator transition without sharp stress changes is an encouraging preliminary result towards switching device applications. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：463 / 466
页数：4
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