Influence of silicon gas-to-particle conversion on SiCCVD in a cold-wall rotating-disc reactor

被引：1
|
作者：
Vorob'ev, AN
Bogdanov, MV
Komissarov, AE
Karpov, SY
Bord, OV
Lovtsus, AA
Makarov, YN
机构：
[1] Soft Impact Ltd, RU-194156 St Petersburg, Russia
[2] Univ Erlangen Nurnberg, Inst Fluid Mech, DE-91058 Erlangen, Germany
来源：
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷
关键词：
C/Si ratio; gas phase nucleation; growth rate; secondary phase formation;
D O I：
10.4028/www.scientific.net/MSF.353-356.107
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Chemical Vapor Deposition (CVB) of SiC in a vertical cold-wall rotating-disk reactor is modeled in a wide range of precursor (silane and propane) flow rate variation. It is found that SiC growth rate is limited by the gas mixture depletion in silicon atoms due to gas-phase nucleation. The secondary phase (graphite and silicon) formation on the growing surface is analyzed. The SIC growth window depending on the precursor flow rates is calculated, and a significant influence of the gas-phase nucleation on the window is demonstrated.
引用
收藏
页码：107 / 110
页数：4
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