GaNAs as strain compensating layer for 1.55 μn light emission from InAs quantum dots

被引：25

作者：

Ganapathy, S

Zhang, XQ

Suemune, I

Uesugi, K

Kumano, H

Kim, BJ

Seong, TY

机构：

[1] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0600812, Japan

[2] Japan Sci & Technol Corp, CREST, Kawaguchi 3320012, Japan

[3] Kwangju Inst Sci & Technol, Ctr Frontier Mat, Kwangju 500712, South Korea

[4] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 9A期

关键词：

GaNAs; strain compensating layer (SCL); InAs quantum dot; photoluminescence; long-wavelength;

D O I：

10.1143/JJAP.42.5598

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaNAs strain-compensating layers (SCLs) are applied to bury InAs quantum dots (QDs) grown on GaAs substrates. The main idea is the compensation of the compressive strain induced by InAs QDs with the tensile strain in the GaNAs SCLs to keep the total strain of the system minimum. The application of the GaNAs SCLs resulted in a systematic shift of photoluminescence (PL) peaks of the InAs QDs toward the longer wavelengths with the increase of the nitrogen (N) composition in GaNAs, and luminescence at a wavelength of 1.55 mum has been achieved from the InAs QDs for the N composition of 2.7% in the GaNAs SCL. This result is promising for the application of GaNAs SCL for InAs-QDs-based long-wavelength light sources for optical-fiber communication systems.

引用

页码：5598 / 5601

页数：4

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