Characteristics of porous 3C-SiC thin films formed with nitrogen doping concentrations

被引：1
|
作者：
Kim, Kang-San [1 ]
Chung, Gwiy-Sang [1 ]
机构：
[1] Univ Ulsan, Sch Elect Engn, Ulsan 680749, South Korea
来源：
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷
关键词：
Porous; 3C-SiC; nitrogen doping; anodization; UV-LED;
D O I：
10.4028/www.scientific.net/MSF.645-648.391
中图分类号：
TB33 [复合材料];
学科分类号：
摘要：
This paper describes the characteristics of porous 3C-SiC with in-situ N-doping concentrations. Polycrystalline (poly) 3C-SiC thin films were deposited on p-type Si (100) substrates by APCVD using hexamethyildisilane (HMDS: Si(2)(CH(3))(6)). The porous 3C-SiC (pSiC) was achieved by anodized with 380 nm UV-LED. The characteristics of the N(2) doped pSiC were evaluated using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and photo luminescence (PL). Average pore diameter is about 50 nm and etched area was increased with N(2) doping rate. These results are attributed to decrease the crystallinity by N(2) doping. The band gaps of poly 3C-SiC films and porous 3C-SiC films were 2.5 eV and 2.7 eV, respectively.
引用
收藏
页码：391 / 394
页数：4
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