Optoelectrical, structural and morphological characterization of Cu2ZnSnSe4 compound used in photovoltaic applications

被引：3

作者：

Mesa, F. ^{[1
]}

Leguizamon, A. ^{[2
]}

Dussan, A. ^{[3
]}

Gordillo, G. ^{[3
]}

机构：

[1] Univ Rosario, Fac Ciencias Nat & Matemat, Grp NanoTech, Cra 24 63C-69, Bogota, Colombia

[2] Univ Libre, Fac Ingn, Cra 70 53-40, Bogota, Colombia

[3] Univ Nacl Colombia, Fac Ciencias, Dept Fis, Cra 30 45-03, Bogota, Colombia

来源：

APPLIED SURFACE SCIENCE | 2016年 / 384卷

关键词：

CZTSe; Thin films; Electrical transport; Raman; XRD; FILM SOLAR-CELLS; THIN-FILMS; GROWTH; ZN; SN;

D O I：

10.1016/j.apsusc.2016.04.073

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work, results are reported concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 (CZTSe) thin films, grown through a chemical reaction of the metallic precursors by co-evaporation in a two-stage process. XRD measurements revealed that the samples deposited by selenization of Cu and Sn grow in the kesterite phase (CZTSe), respectively. Effect of the deposition temperature and mass ratio Cu/ZnSe on the transport properties of CZTSe films were analyzed. It was also found that the electrical conductivity of the thin films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range. The molecular and morphological effect on the compound through Raman and AFM measurements was studied. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：386 / 392

页数：7

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