Evidence of a stoichiometry-related compensation in undoped high-resistivity CdTe crystals

被引：4
|
作者：
Zappettini, A [1 ]
Bissoli, F [1 ]
Zha, M [1 ]
Zanotti, L [1 ]
机构：
[1] CNR, IMEM, I-43010 Parma, Italy
来源：
11TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS (II-VI 2003), PROCEEDINGS | 2004年 / 1卷 / 04期
关键词：
D O I：
10.1002/pssc.200304277
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nominally undoped CdTe crystals are grown by both vapour phase and Bridgman technique. The stoichiometry of the feed charge was adjusted in order to obtain n-type, p-type and high resistivity crystals. The stoichiometry of CdTe samples is studied by means of a detailed analysis of the temperature dependence of the equilibrium partial pressures of Cd and Te-2 vapours. A strong evidence of a correlation of the stoichiometry and the resistivity of the samples has been found. This suggests that a stoichiometry related defect plays an important role in the compensation mechanism of the nominally undoped crystals. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：739 / 742
页数：4
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