Electronic asymmetry in self-assembled quantum dot molecules made of identical InAs/GaAs quantum dots

被引:20
|
作者
He, LX [1 ]
Bester, G [1 ]
Zunger, A [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
D O I
10.1103/PhysRevB.72.081311
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We show that a diatomic dot molecule made of two identical, vertically stacked, strained InAs/GaAs self-assembled dots exhibits an asymmetry in its single- and many-particle wave functions. The single particle wave function is asymmetric due to the inhomogeneous strain, while the asymmetry of the many-particle wave functions is caused by the correlation-induced localization: the lowest singlet (1)Sigma(g) and triplet (3)Sigma states show that the two electrons are each localized on different dots within the molecule; for the next singlet states (1)Sigma(u) both electrons are localized on the same (bottom) dot for interdot separation d > 8 nm. The singlet-triplet splitting is found to be similar to 0.1 meV at interdot separation d=9 nm and as large as 100 meV for d=4 nm, orders of magnitude larger than the few meV found in the large (50-100 nm) electrostatically confined dots.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Self-assembled InAs/GaAs quantum dots and quantum dot laser
    Wang, ZG
    Liu, FQ
    Liang, JB
    Xu, B
    [J]. SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 2000, 43 (08): : 861 - 870
  • [2] Self-assembled InAs/GaAs quantum dots and quantum dot laser
    王占国
    刘峰奇
    梁基本
    徐波
    [J]. Science China Mathematics, 2000, (08) : 861 - 870
  • [3] Self-assembled InAs/GaAs quantum dots and quantum dot laser
    Zhanguo Wang
    Fengqi Liu
    Jiben Liang
    Bo Xu
    [J]. Science in China Series A: Mathematics, 2000, 43 : 861 - 870
  • [4] Electronic structure of self-assembled InAs/InP quantum dots: Comparison with self-assembled InAs/GaAs quantum dots
    Gong, Ming
    Duan, Kaimin
    Li, Chuan-Feng
    Magri, Rita
    Narvaez, Gustavo A.
    He, Lixin
    [J]. PHYSICAL REVIEW B, 2008, 77 (04)
  • [5] Electronic structure of InAs/GaAs self-assembled quantum dots
    Cusack, MA
    Briddon, PR
    Jaros, M
    [J]. PHYSICAL REVIEW B, 1996, 54 (04) : R2300 - R2303
  • [6] Excitonic polaron in InAs/GaAs self-assembled quantum dot molecules
    Adames, M.
    Bedoya, M.
    Camacho B., A. S.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 2, 2007, 4 (02): : 582 - +
  • [7] Exciton states in self-assembled InAs/GaAs quantum dot molecules
    Ortner, G
    Schwab, M
    Borri, P
    Langbein, W
    Woggon, U
    Bayer, M
    Fafard, S
    Wasilewski, Z
    Hawrylak, P
    Lyanda-Geller, YB
    Reinecke, TL
    Forchel, A
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 25 (2-3): : 249 - 260
  • [8] Electronic structure of self-assembled InAs quantum dots in GaAs matrix
    Brounkov, PN
    Polimeni, A
    Stoddart, ST
    Henini, M
    Eaves, L
    Main, PC
    Kovsh, AR
    Musikhin, YG
    Konnikov, SG
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (08) : 1092 - 1094
  • [9] Spontaneous localization in InAs/GaAs self-assembled quantum-dot molecules
    Sheng, WD
    Leburton, JP
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (23) : 4449 - 4451
  • [10] Electronic properties and optical spectra of InAs/GaAs self-assembled quantum dots
    Cusack, MA
    Jaros, M
    Briddon, PR
    [J]. MICROELECTRONIC ENGINEERING, 1998, 43-4 : 91 - 98