A novel self-aligned fabrication process for microwave static induction transistors in silicon carbide

被引：14

作者：

Henning, JP ^{[1
]}

Przadka, A

Melloch, MR

Cooper, JA

机构：

[1] OptoLynx Inc, W Lafayette, IN 47906 USA

[2] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 12期

关键词：

microwave; silicon carbide; SIT; static induction transistor;

D O I：

10.1109/55.887471

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel multiple-self-aligned fabrication process is developed for recessed gate microwave static induction transistors (SITs) in silicon carbide (SiC). This process is demonstrated by fabricating 4H-SiC SITs having record f(T) of 7 GHz.

引用

页码：578 / 580

页数：3

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