Inhomogeneous probe surface induced effect in Kelvin probe force microscopy

被引:1
|
作者
Xu, Jie [1 ]
Bai, Gang
Li, Jinze
Li, Wei
机构
[1] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Peoples R China
关键词
FREQUENCY-SHIFTS; RECONSTRUCTION; RESOLUTION; TIPS;
D O I
10.1063/5.0005276
中图分类号
O59 [应用物理学];
学科分类号
摘要
The probe in Kelvin probe force microscopy (KPFM) may have an inhomogeneous tip surface by artificial modification or by unexpected wearing or contamination. In the present work, the non-equipotential tip surface induced effect in KPFM with conducting samples was simulated by an analytical multiple-capacitances model and a numerical boundary element model, respectively. The capacitance model showed that the KPFM system satisfies the principle of superposition without couplings between the inhomogeneous tip and inhomogeneous sample induced signals. In addition, the more precise boundary element model demonstrated that the non-uniform tip surface would not change the KPFM resolution but will induce a signal shift depending on tip-sample distance, tip oscillation amplitude, and modulation mode. In the simulations, a cantilever calibration factor of 3/8 was proposed based on the Euler-Bernoulli beam theory. Our simulation result is in good agreement with a recent KPFM distance spectroscopy experiment on a silver sample, and the simulation method is also promising for the future discussion about dielectric samples.
引用
收藏
页数:11
相关论文
共 50 条
  • [1] Inhomogeneous probe surface induced effect in Kelvin probe force microscopy
    Xu, Jie
    Bai, Gang
    Li, Jinze
    Li, Wei
    [J]. Journal of Applied Physics, 2020, 127 (18):
  • [2] KELVIN PROBE FORCE MICROSCOPY
    NONNENMACHER, M
    OBOYLE, MP
    WICKRAMASINGHE, HK
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (25) : 2921 - 2923
  • [3] The influence of surface topography on Kelvin probe force microscopy
    Sadewasser, S.
    Leendertz, C.
    Streicher, F.
    Lux-Steiner, M. Ch
    [J]. NANOTECHNOLOGY, 2009, 20 (50)
  • [4] Kelvin probe force microscopy of semiconductor surface defects
    Rosenwaks, Y
    Shikler, R
    Glatzel, T
    Sadewasser, S
    [J]. PHYSICAL REVIEW B, 2004, 70 (08) : 085320 - 1
  • [5] Preventing probe induced topography correlated artifacts in Kelvin Probe Force Microscopy
    Polak, Leo
    Wijngaarden, Rinke J.
    [J]. ULTRAMICROSCOPY, 2016, 171 : 158 - 165
  • [6] The effect of sample resistivity on Kelvin probe force microscopy
    Weymouth, A. J.
    Giessibl, F. J.
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (21)
  • [7] Pulsed Force Kelvin Probe Force Microscopy
    Jakob, Devon S.
    Wang, Haomin
    Xu, Xiaoji G.
    [J]. ACS NANO, 2020, 14 (04) : 4839 - 4848
  • [8] Surface potential modeling and reconstruction in Kelvin probe force microscopy
    Xu, Jie
    Wu, Yangqing
    Li, Wei
    Xu, Jun
    [J]. NANOTECHNOLOGY, 2017, 28 (36)
  • [9] Measurement of Surface Potential and Adhesion with Kelvin Probe Force Microscopy
    Zhang, Hao
    Hussain, Danish
    Meng, Xianghe
    Song, Jianmin
    Xie, Hui
    [J]. 2016 INTERNATIONAL CONFERENCE ON MANIPULATION, AUTOMATION AND ROBOTICS AT SMALL SCALES (MARSS), 2016,
  • [10] Pulsed Force Kelvin Probe Force Microscopy-A New Type of Kelvin Probe Force Microscopy under Ambient Conditions
    Zahmatkeshsaredorahi, Amirhossein
    Jakob, Devon S.
    Xu, Xiaoji G.
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2024, 128 (24): : 9813 - 9827