Reduction of switching current density in perpendicular magnetic tunnel junctions by tuning the anisotropy of the CoFeB free layer

被引：16
|
作者：
Rahman, M. T. [1 ]
Lyle, A. [1 ]
Amiri, P. Khalili [2 ]
Harms, J. [1 ]
Glass, B. [1 ]
Zhao, H. [1 ]
Rowlands, G. [3 ]
Katine, J. A. [4 ]
Langer, J. [5 ]
Krivorotov, I. N. [3 ]
Wang, K. L. [2 ]
Wang, J. P. [1 ]
机构：
[1] Univ Minnesota, Dept Elect & Comp Engn, MINT Ctr, Minneapolis, MN 55455 USA
[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[3] Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 96297 USA
[4] Hitachi Global Storage Technol, San Jose, CA 95135 USA
[5] Singulus Technol, D-63796 Kahl, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 07期
关键词：
MULTILAYERS;
D O I：
10.1063/1.3673834
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The spin torque switching behavior of perpendicular magnetic tunnel junctions consisting of a CoFeB free layer and a CoFeB/Ru/(Co/Pd)n exchanged coupled fixed layer is investigated. At first, the Ru and CoFeB layer thickness is tuned in the CoFeB/Ru/(Co/Pd) n structure to form a ferromagnetically exchange coupled structure with a strong PMA at an annealing treatment of 325 degrees C for 1 h. Then it is shown that that the CoFeB free layer thickness plays an important role in the switching current density. The switching current density decreases with the increase of the CoFeB free layer thickness. A minimum switching current density of 1.87 MA/cm(2) is achieved for a device with 60 nm diameter. The mechanism involved in the switching current reduction with the decrease of CoFeB free layer thickness is also studied. (C) 2012 American Institute of Physics. [doi:10.1063/1.3673834]
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页数：3
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