Spin pumping and inverse spin Hall effects-Insights for future spin-orbitronics

被引:53
|
作者
Zhang, Wei [1 ]
Jungfleisch, Matthias B. [1 ]
Jiang, Wanjun [1 ]
Sklenar, Joseph [2 ]
Fradin, Frank Y. [1 ]
Pearson, John E. [1 ]
Ketterson, John B. [2 ]
Hoffmann, Axel [1 ]
机构
[1] Argonne Natl Lab, Div Mat Sci, Lemont, IL 60439 USA
[2] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
关键词
TOPOLOGICAL INSULATOR; EFFECTIVE-FIELD; CHARGE-CURRENT; ORBIT TORQUES; LAYER; MAGNETIZATION; POLARIZATION;
D O I
10.1063/1.4913887
中图分类号
O59 [应用物理学];
学科分类号
摘要
Quantification of spin-charge interconversion has become increasingly important in the fast-developing field of spin-orbitronics. Pure spin current generated by spin pumping acts as a sensitive probe for many bulk and interface spin-orbit effects, which has been indispensable for the discovery of many promising new spin-orbit materials. We apply spin pumping and inverse spin Hall effect experiments, as a useful metrology, and study spin-orbit effects in a variety of metals and metal interfaces. We quantify the spin Hall effects in Ir and W using the conventional bilayer structures and discuss the self-induced voltage in a single layer of ferromagnetic permalloy. Finally, we extend our discussions to multilayer structures and quantitatively reveal the spin current flow in two consecutive normal metal layers. (C) 2015 AIP Publishing LLC.
引用
收藏
页数:6
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