Investigations of temperature-dependent interface traps in AlGaN/GaN HEMT on CVD-diamond

被引：7
|
作者：
Ranjan, Kumud [1 ,2 ]
Arulkumaran, Subramaniam [2 ]
Ng, Geok Ing [1 ,2 ]
机构：
[1] Nanyang Technol Univ, Sch EEE, Singapore 637553, Singapore
[2] Nanyang Technol Univ, Temasek Lab NTU, Singapore 639798, Singapore
来源：
APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 10期
关键词：
STATES;
D O I：
10.7567/1882-0786/ab45d2
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper we report, for the first time, the investigation of hetero-interface trapping characteristics in AlGaN/GaN with a high-electron-mobility transistor (HEMT) on a CVD-diamond using the conductance method at different temperatures (25 degrees C to 200 degrees C). Fast traps with time constants from 0.16 to 10.01 mu s were identified to be the dominating traps at the AlGaN/GaN hetero-interface. The density of the traps (D-T) was found to increase with temperature and was attributed to the excitation of deeper traps in the bandgap at elevated temperatures. Finally, temperature-dependent pulsed I-DS-V-DS measurements were taken to correlate the D-T behaviour and current collapse in the device. (C) 2019 The Japan Society of Applied Physics
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页数：4
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