Admittance spectroscopy of a phosphorus-doped n-diamond homoepitaxial layer

Generation and recombination processes of electrons through phosphorus (P) donor are analyzed by admittance spectroscopy for a Ni/Au Schottky contact oil an n-diamond epilayer. The dependence of capacitance and conductance frequency oil temperature is interpreted by Shockley-Read-Hall statistics. The thermal ionization energy and capture cross-section of P donor are evaluated to be 0.54 +/- 0.02 eV and (4.5 +/- 2.0) x 10(-17) cm(2), respectively. Broadening of the conductance-frequency curve is observed, which is believed to be evidence of a long Debye tail of electron distribution at the depletion layer edge, (c) 2005 Elsevier B.V. All rights reserved.