In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110)

被引：62
|
作者：
Okino, H
Matsuda, I
Hobara, R
Hosomura, Y
Hasegawa, S
Bennett, PA
机构：
[1] Univ Tokyo, Sch Sci, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
[2] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 23期
基金：
日本学术振兴会;
关键词：
D O I：
10.1063/1.1948519
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have performed in situ resistance measurements for individual epitaxial CoSi2 nanowires (NWs) (approximately 60 nm wide and 5 mu m long) formed on a Si(110) surface. Two- and four-point probe measurements were done with a multitip scanning tunneling microscope at room temperature. The NWs were well isolated from the substrate by a Schottky barrier with zero-bias resistance of 10(7) Omega. The resistivity of the NWs was 30 mu Omega cm, which is similar to that for high-quality epitaxial films. The NW resistance was essentially unchanged after exposure to air. (c) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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