Generation-recombination instabilities in thin-film structures

被引：2

作者：

Kolobaev, VV ^{[1
]}

机构：

[1] Moscow Power Engn Inst, Moscow 111250, Russia

来源：

SEMICONDUCTORS | 1999年 / 33卷 / 04期

关键词：

Magnetic Material; Electromagnetism; Resistance Structure; Differential Resistance; Negative Differential Resistance;

D O I：

10.1134/1.1187704

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The possibility of negative differential resistance, which appears in symmetric thin-film metal-semiconductor-metal structures, is discussed. A model, which can explain to first approximation why generation-recombination processes that take place in the bulk of this sample during bipolar injection should lead to bistability, is proposed. It is shown that the design and use of these negative differential resistance structures could lead to promising new devices for detecting and processing information. (C) 1999 American Institute of Physics. [S1063-7826(99)00904-7].

引用

页码：410 / 411

页数：2

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