Hall effect and magnetic properties of III-V based (Ga1-xMnx)As/AlAs magnetic semiconductor superlattices

被引：28
|
作者：
Hayashi, T
Tanaka, M
Seto, K
Nishinaga, T
Shimada, H
Ando, K
机构：
[1] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 113, Japan
[2] Univ Tokyo, Cryogen Ctr, Bunkyo Ku, Tokyo 113, Japan
[3] Electrotech Lab, Tsukuba, Ibaraki 305, Japan
[4] Japan Sci & Technol Corp, PRESTO, Kawaguchi 332, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 11期
关键词：
D O I：
10.1063/1.367577
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present magnetotransport properties, with emphasis on Hall effect, of a new class of III-V based magnetic (GaMnAs)/nonmagnetic (AlAs) semiconductor superlattices (SLs) grown by low-temperature molecular beam epitaxy. The SLs having relatively wide (GaMn)As layers (greater than or equal to 70 Angstrom) are ferromagnetic at low temperatures, and their hole concentrations and Curie temperatures are estimated through the analysis of Hall measurements. The dependence of the magnetic and transport propel-ties on the GaMnAs well width is discussed. (C) 1998 American Institute of Physics.
引用
收藏
页码：6551 / 6553
页数：3
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