High-precision interconnect analysis

被引:7
|
作者
Martins, R [1 ]
Pyka, W [1 ]
Sabelka, R [1 ]
Selberherr, S [1 ]
机构
[1] Vienna Tech Univ, Inst Mikrotech, A-1040 Vienna, Austria
关键词
capacitance; resistance; three-dimensional simulation; topography;
D O I
10.1109/43.736187
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Integrated circuits have evolved to a stage where interconnections significantly limit their performance and functional complexity. We introduce a set of tools to perform highly accurate three-dimensional capacitance and resistance/thermal calculations of interconnect structures. We automatically generate these structures from layout information and is given process description. The main enhancement of our work is that we extract the interconnect characteristics after a complete and accurate topography simulation with previous optional lithography analysis, instead of elementary geometric blocks derived from simple analytical models. The capacitance and resistance/thermal extractor simulators are based on optimized finite-element methods, and the topography simulators use a cellular data-based approach.
引用
收藏
页码:1148 / 1159
页数:12
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