Surface electromigration of Au ultrathin film on MoS2

被引：4
|
作者：
Wu, NJ [1 ]
Shimizu, S [1 ]
Hermie, MT [1 ]
Sakamoto, K [1 ]
Natori, A [1 ]
Yasunaga, H [1 ]
机构：
[1] Univ Electrocommun, Chofu, Tokyo 1828585, Japan
来源：
APPLIED SURFACE SCIENCE | 2001年 / 169卷
关键词：
surface electromigration; Au; MoS2; mass transport;
D O I：
10.1016/S0169-4332(00)00742-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The mass transport of Au ultrathin film on a semiconductor MoS2 was investigated by atomic force microscopy (AFM) and scanning Auger microscopy (SAM). The surface electromigration of the Au film was found when a de current was passed through the MoS2 substrate. The Au ultrathin film on MoS2 grew in a typical Volmer-Weber (V-W) growth mode, The AFM measurements indicated that the distribution of the Au islands exhibited clearly a preferential lateral spread towards the cathode, that is, the surface electromigration took place. The direction of the surface electromigration on MoS2 is opposite to that of the Au electromigration on Si. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：485 / 488
页数：4
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