On a One-Dimensional Hydrodynamic Model for Semiconductors with Field-Dependent Mobility

被引:2
|
作者
Ali, Giuseppe [1 ,2 ]
Lamonaca, Francesco [3 ]
Scuro, Carmelo [1 ]
Torcicollo, Isabella [4 ]
机构
[1] Univ Calabria, Dept Phys, I-87036 Arcavacata Di Rende, Italy
[2] Natl Inst Nucl Phys INFN, Associated Grp Cosenza, I-87036 Cosenza, Italy
[3] Univ Calabria, Dept Comp Sci Modelling Elect & Syst DIMES, I-87036 Arcavacata Di Rende, Italy
[4] CNR, Ist Applicaz Calcolo Mauro Picone IAC, I-80131 Naples, Italy
关键词
subsonic solutions; unipolar semiconductor; saturation velocity; steady-state hydrodynamical model; TRANSONIC SHOCK SOLUTIONS; EULER-POISSON SYSTEM; ASYMPTOTIC CONVERGENCE; SUBSONIC SOLUTIONS; STATIONARY WAVES; FLOW; STABILITY; SILICON;
D O I
10.3390/math9172152
中图分类号
O1 [数学];
学科分类号
0701 ; 070101 ;
摘要
We consider a one-dimensional, isentropic, hydrodynamical model for a unipolar semiconductor, with the mobility depending on the electric field. The mobility is related to the momentum relaxation time, and field-dependent mobility models are commonly used to describe the occurrence of saturation velocity, that is, a limit value for the electron mean velocity as the electric field increases. For the steady state system, we prove the existence of smooth solutions in the subsonic case, with a suitable assumption on the mobility function. Furthermore, we prove uniqueness of subsonic solutions for sufficiently small currents.
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页数:9
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