Atomic layer deposition of Y2O3 films on silicon using tris(ethylcyclopentadienyl) yttrium precursor and water vapor

Yttrium oxide films are deposited on silicon using a new precursor, tris(ethylcyclopentadienyl) yttrium with water vapor as the oxidizer, by means of atomic layer deposition (ALD). Film growth kinetics has been examined under different reactor conditions, and growth saturation is evident from precursor dosage dependence. The film thickness increases linearly with the number of deposition cycles, yielding a growth rate of 1.7 +/- 0.1 A/cycle at optimal ALD conditions. Increasing the reactor temperature from 200 to 400 degrees C shows gradual increase in growth rate, with a narrow temperature plateau in the range of 250-285 degrees C. X-ray photoelectron spectral analysis of Y2O3 films indicates the film to be stoichiometric with no evidence of carbon contamination, whereas glancing incidence X-ray diffraction data of as-deposited Y2O3 suggests the film structure to be polycrystalline. (C) 2008 The Electrochemical Society.