Facile and precise quantitative determination of silicon in naphtha by inductively coupled plasma-optical emission spectroscopy

被引:2
|
作者
Joo, Sungkyung [1 ,2 ]
Suh, Dongchul [1 ]
机构
[1] Hoseo Univ, Dept Chem Engn, Asan, South Korea
[2] JKC Corp, Cheonan, South Korea
关键词
Inductively coupled plasma-optical emission spectroscopy; Silicon; Naphtha; MASS-SPECTROMETRY; ATOMIC EMISSION; LIMITS; SI;
D O I
10.1186/s40543-022-00339-0
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The amount of silicon in naphtha must be controlled because it results in silica deposits in vehicle components, such as spark plugs, catalytic converters, and oxygen sensors, which can lead to fuel economy degradation, increased emissions, and damage to catalytic converters. Naphtha has low specific gravity and high volatility; plasma does not form during analysis using inductively coupled plasma-optical emission spectrometry. Therefore, the analysis of silicon in naphtha has been conducted using a dilution method with organic solvents. On the other hand, a high dilution factor increases the LOQ (limit of quantitation), making it difficult to analyse below 100 ppb. In this study, propylene glycol monomethyl ether acetate (PGMEA) was used to solve this problem because it has excellent naphtha solubility, low volatility, and is used widely in semiconductor processing. A LOQ and LOD (limit of detection) of up to 3.3 ppb and 1.0 ppb, respectively, could be achieved using a concentration method by diluting naphtha in PGMEA and heating it. In addition, the reference materials were prepared with octamethylcyclotetrasiloxane to ensure analysis accuracy; excellent results were obtained with an 88% recovery rate.
引用
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页数:9
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