Two-dimensional hexagonal boron nitride based memristor

被引：6
|
作者：
Wu Quan-Tan [1 ,2 ]
Shi Tuo [1 ,2 ]
Zhao Xiao-Long [1 ]
Zhang Xu-Meng [1 ,2 ]
Wu Fa-Cai [1 ]
Cao Rong-Rong [1 ,2 ]
Long Shi-Bing [1 ,2 ]
Lu Hang-Bing [1 ,2 ]
Liu Qi [1 ,2 ]
Liu Ming [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
ACTA PHYSICA SINICA | 2017年 / 66卷 / 21期
基金：
中国国家自然科学基金; 国家重点研发计划;
关键词：
hexagonal boron nitride; resistive switching; memristor; neuromorphic; THIN-FILM;
D O I：
10.7498/aps.66.217304
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Hexagonal boron nitride (h-BN) based resistive switching device is fabricated with the multilayer h-BN film serving as an active material. The device shows the coexistence of forming-free and self-compliance bipolar resistive switching behavior with reproducible switching endurance and long retention time. Moreover, the device in pulse mode shows analog resistive switching characteristics, i.e. the resistance states can be continuously tuned by successive voltage pulses. This suggests that the device is also capable of mimicking the synaptic weight changes in neuromorphic systems.
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页数：7
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