Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO

被引：8
|
作者：
Mtangi, W. [1 ]
Nel, J. M. [1 ]
Auret, F. D. [1 ]
Chawanda, A. [1 ]
Diale, M. [1 ]
Nyamhere, C. [2 ]
机构：
[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa
[2] Nelson Mandela Metropolitan Univ, Dept Phys, ZA-6031 Port Elizabeth, South Africa
来源：
PHYSICA B-CONDENSED MATTER | 2012年 / 407卷 / 10期
基金：
新加坡国家研究基金会;
关键词：
Hall effect; Surface conduction; Zinc interstitials; Annealing; Shallow donors; DONORS;
D O I：
10.1016/j.physb.2011.09.101
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8 +/- 0.3) meV that has been suggested as Zn-i related and possibly H-complex related and (54.5 +/- 0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X-Zn. The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) [1]. Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60 x 10(17) cm(-3) at 200 degrees C to 4.37 x 10(18) cm(-3) at 800 degrees C. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1624 / 1627
页数：4
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  • [1] Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements
    Mtangi, W.
    Auret, F. D.
    Chawanda, A.
    van Rensburg, P. J. Janse
    Coelho, S. M. M.
    Nel, J. M.
    Diale, M.
    van Schalkwyk, L.
    Nyamhere, C.
    [J]. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2012, 177 (02): : 180 - 183
  • [2] Anisotropic Optoelectronic Properties of Melt-Grown Bulk CsPbBr3 Single Crystal
    Zhang, Peng
    Zhang, Guodong
    Liu, Lin
    Ju, Dianxing
    Zhang, Longzhen
    Cheng, Kui
    Tao, Xutang
    [J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2018, 9 (17): : 5040 - 5046
  • [3] High-quality, melt-grown ZnO single crystals
    Reynolds, DC
    Litton, CW
    Look, DC
    Hoelscher, JE
    Claflin, B
    Collins, TC
    Nause, J
    Nemeth, B
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (09) : 4802 - 4805
  • [4] Evaluation of melt-grown, ZnO single crystals for use as alpha-particle detectors
    Neal, John S.
    Giles, Nancy C.
    Yang, Xiaocheng
    Wall, R. Andrew
    Ucer, K. Burak
    Williams, Richard T.
    Wisniewski, Dariusz J.
    Boatner, Lynn A.
    Rengarajan, Varathajan
    Nause, Jeff
    Nemeth, Bill
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (03) : 1397 - 1403
  • [5] OBSERVATION OF PENDELLOSUNG FRINGES IN A MELT-GROWN LITHIUM-NIOBATE SINGLE-CRYSTAL
    SUGII, K
    IWASAKI, H
    [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1973, 6 (APR1) : 97 - 98
  • [6] SURFACE-MORPHOLOGY OF MELT-GROWN CDI2 SINGLE-CRYSTALS
    NIGLI, S
    JAGADISH, C
    CHADHA, GK
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 1988, 23 (04) : K74 - K76
  • [7] Nitrogen and hydrogen in bulk single-crystal ZnO
    Jokela, S. J.
    Tarun, M. C.
    McCluskey, M. D.
    [J]. PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 4810 - 4812
  • [8] Effect of heat treatment on properties of melt-grown bulk In2O3 single crystals
    Galazka, Zbigniew
    Irmscher, Klaus
    Pietsch, Mike
    Schulz, Tobias
    Uecker, Reinhard
    Klimm, Detlef
    Fornari, Roberto
    [J]. CRYSTENGCOMM, 2013, 15 (12): : 2220 - 2226
  • [9] Characterization of bulk ZnO single crystal grown by a CVT method
    Wei, Xuecheng
    Zhao, Youwen
    Dong, Zhiyuan
    Li, Jinmin
    [J]. SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, 2008, 6841
  • [10] Cracking in melt-grown RE-Ba-Cu-O single-grain bulk superconductors
    Diko, P
    [J]. SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2004, 17 (11): : R45 - R58
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