Enhanced spin-pumping efficiency in hcp Co polycrystalline films obtained by sputtering deposition with high substrate temperature

被引:1
|
作者
Isogami, Shinji [1 ]
Hinata, Shintaro [2 ]
机构
[1] Fukushima Natl Coll Technol, Dept Gen Educ, Iwaki, Fukushima 9708034, Japan
[2] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan
关键词
D O I
10.7567/JJAP.54.073001
中图分类号
O59 [应用物理学];
学科分类号
摘要
The variation of the resonance field and the Gilbert damping parameter (G) with hcp Co film thickness was evaluated by measuring the X-and Q-band ferromagnetic resonance (FMR) for buffer-layer/Co (2-16 nm)/Cu (1 nm)/Pt (15 nm) films. The two types of hcp Co films were deposited at a substrate temperature (T-sub) of either 400 degrees C or room temperature using a magnetron sputtering system. The G values for the Co films with T-sub = 400 degrees C exhibited a more rapid increase with decreasing thickness. In addition, the effective linewidth of FMR spectrum exhibited more rapid increase in the Q-band FMR for Tsub = 400 degrees C. The experimental results suggest that the spin-pumping is enhanced to a greater extent in the Co films fabricated at T-sub = 400 degrees C. Judging from the structural analysis of the Co films, it is possible that grain growth involving atomically flat surfaces of Co films might enhance the spin-pumping efficiency. (C) 2015 The Japan Society of Applied Physics
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页数:4
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