Dynamics of electron-hole plasmas and localized excitons in highly excited GaN-based ternary alloys

被引：4
|
作者：
Hirano, D. [1 ]
Kanemitsu, Y. [1 ]
机构：
[1] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan
来源：
JOURNAL OF LUMINESCENCE | 2008年 / 128卷 / 5-6期
基金：
日本学术振兴会;
关键词：
electron-hole plasma; biexciton; localized exciton;
D O I：
10.1016/j.jlumin.2007.10.013
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have studied photoluminescence (PL) spectra of GaN crystals and InGaN ternary alloys at low temperatures as a function of the femtosecond laser excitation intensity. With an increase of the intensity, the broad PL due to electron-hole plasmas (EHP) appears below the biexciton PL in the GaN sample. On the other hand, the broad EHP PL appears above the localized exciton PL in the InGaN sample. The intensity dependence of PL properties of InGaN crystals is completely different from that of GaN crystals. The effect of alloy disorder on PL processes in ternary alloys is discussed. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：712 / 714
页数：3
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