Room-temperature single molecular memory

被引:8
|
作者
Kano, Shinya [1 ,2 ]
Yamada, Yasuyuki [2 ,3 ]
Tanaka, Kentaro [2 ,4 ]
Majima, Yutaka [1 ,2 ,5 ]
机构
[1] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan
[2] Japan Sci & Technol Agcy, CREST, Yokohama, Kanagawa 2268503, Japan
[3] Nagoya Univ, Res Ctr Mat Sci, Nagoya, Aichi 4648602, Japan
[4] Nagoya Univ, Grad Sch Sci, Dept Chem, Nagoya, Aichi 4648602, Japan
[5] Sunchon Natl Univ, Dept Printed Elect Engn, Sunchon 540742, South Korea
关键词
Number: 11J08966,20108011,21108012, Acronym: KAKEN, Sponsor: Japan Society for the Promotion of Science, Number: -, Acronym: MEXT, Sponsor: Ministry of Education, Culture, Sports, Science and Technology, Number: R31-10022, Acronym: MEST, Sponsor: Ministry of Education, Science and Technology, Number: -, Acronym: TITECH, Sponsor: Tokyo Institute of Technology,;
D O I
10.1063/1.3679127
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single molecular memory operation was observed on a porphyrin derivative by scanning tunneling microscopy at room temperature. A porphyrin derivative with four disulfide groups was chemically synthesized and chemisorbed on a Au(111) surface. Coulomb blockade behaviors and switching behaviors in current-voltage (I-V) characteristics were observed on a single porphyrin derivative by scanning tunneling spectroscopy. Based on the switching behaviors, the memory operation of electrical conductance in the porphyrin derivative was demonstrated by applying a programmed pulse sequence with an on/off ratio of 2.9 at room temperature. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679127]
引用
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页数:3
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