Row structure in metal-induced Si(111) surface reconstructions

被引：1
|
作者：
Jin, KJ
Sanders, BC
Pan, SH
Yang, GZ
机构：
[1] Chinese Acad Sci, Inst Phys, Ctr Condensed Matter Phys, Lab Opt Phys, Beijing 100080, Peoples R China
[2] Macquarie Univ, Dept Phys, Sydney, NSW 2109, Australia
来源：
SURFACE AND INTERFACE ANALYSIS | 2001年 / 32卷 / 01期
关键词：
models of surface kinetics; quantum effects; surface relaxation and reconstruction; metalsemiconductor interfaces;
D O I：
10.1002/sia.1029
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We demonstrate that quantum size effects play a crucial role in the row structure of metal-induced Si(111) reconstruction by identifying the 'magic' widths of the metal adsorbates with the minima of electron energy as a function of adsorbate width. Without any adjustable parameters, we obtain accurate agreement with all recent results for Si(111)-4 x 1-In and Si(111)-3 x 1-M (M = Li, Na, K, Rb, Ag) structures. This new and simple physical picture of electron energies in metal adsorbates provides a universal quantitative model for describing the row structures of metal-induced Si(111) surface reconstructions. Copyright (C) 2001 John Wiley & Sons, Ltd.
引用
收藏
页码：166 / 170
页数：5
相关论文
共 50 条
  • [1] Quantum size effects in metal-induced Si(111) surface reconstructions
    Jin, KJ
    Sanders, BC
    Pan, SH
    Yang, GZ
    [J]. SURFACE SCIENCE, 2000, 464 (2-3) : L739 - L744
  • [2] METAL-INDUCED RECONSTRUCTIONS OF THE SILICON(111) SURFACE
    PARK, SI
    NOGAMI, J
    QUATE, CF
    [J]. JOURNAL OF MICROSCOPY-OXFORD, 1988, 152 : 727 - 734
  • [3] NEW MODELS FOR METAL-INDUCED RECONSTRUCTIONS ON SI(111)
    HANSSON, GV
    BACHRACH, RZ
    BAUER, RS
    CHIARADIA, P
    [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (15) : 1033 - 1037
  • [4] Superconductivity of metal-induced surface reconstructions on silicon
    Uchihashi, Takashi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (11)
  • [5] METAL-SI(111) SURFACE RECONSTRUCTIONS
    HANSSON, GV
    BACHRACH, RZ
    BAUER, RS
    CHIARADIA, P
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 351 - 352
  • [6] Family of the metal-induced Si(111) 3 × 1 reconstructions with a top Si atom density of 4/3 monolayer
    Department of Electronic Engineering, Fac. Eng., Osaka Univ., Suita, 565, Osaka, Japan
    不详
    不详
    不详
    [J]. Surf Sci, 3 (298-307):
  • [7] SCANNING-TUNNELING-MICROSCOPY OF ALKALI METAL-INDUCED STRUCTURES ON THE SI(111) SURFACE
    JEON, D
    HASHIZUME, T
    SAKURAI, T
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03): : 2044 - 2048
  • [8] AU-INDUCED RECONSTRUCTIONS OF THE SI(111) SURFACE
    HASEGAWA, T
    TAKATA, K
    HOSAKA, S
    HOSOKI, S
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01): : 241 - 244
  • [9] Sm-induced reconstructions on Si(111) surface
    Ehret, E
    Palmino, F
    Mansour, L
    Duverger, E
    Labrune, JC
    [J]. SURFACE SCIENCE, 2004, 569 (1-3) : 23 - 32
  • [10] ELECTRONIC AND ATOMIC-STRUCTURE OF SI(111) AL, AG, AND NI METAL OVERLAYER INDUCED SURFACE RECONSTRUCTIONS
    HANSSON, GV
    BACHRACH, RZ
    BAUER, RS
    CHIARADIA, P
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 550 - 555
12345