Concentration-dependent visible photoluminescence of In2O3:Er3+ under 532 nm excitation

被引：4
|
作者：
Keriti, Y. [1 ]
Keffous, A. [2 ]
Gabouze, N. [2 ]
Trari, M. [3 ]
机构：
[1] USTHB Univ, Fac Phys, Algiers 16000, Algeria
[2] Ctr Rech Technol Semicond Energet, Div Couches Minces Surfaces & Interface, 02 Bd Frantz Fanon,BP 140, Algiers, Algeria
[3] USTHB, Fac Chem, Lab Storage & Valorizat Renewable Energies, BP 32, Algiers 16111, Algeria
来源：
OPTIK | 2019年 / 176卷
关键词：
In2O3 thin films; Sol-gel; Rare earth; Photoluminescence; Er3+-related emission; Structural properties; SOL-GEL; UP-CONVERSION; DOPED IN2O3; THIN-FILMS; LUMINESCENCE; ERBIUM;
D O I：
10.1016/j.ijleo.2018.09.025
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In2O3 thin films were doped with Er3+ at different concentrations (0.5-2%) by sol-gel method and annealed at 1000 degrees C. The In2O3:Er3+ films were characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy, X-ray photoelectron spectroscopy, photoluminescence (PL) and ellipsometry. The films are polycrystalline with a cubic structure related to In2O3. The trivalent state of Erbium in the In2O3 crystal is confirmed by photo electron spectroscopy. Doped films were excited under selective Er3+ excitation at 532 nm; the visible Er3+-related emission is observed in the photoluminescence spectra and the major emissions occur in the green region with strongest lines at 548 and 567 nm. They are mainly produced by the Stark split H-2(11/2) and S-4(3/2) transitions to I-4(15/2) ground state and highest emission is observed on In2O3:1% Er3+.
引用
收藏
页码：419 / 424
页数：6
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