Redundancy techniques for high-density DRAMs

被引:31
|
作者
Horiguchi, M
机构
关键词
D O I
10.1109/ICISS.1997.630243
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper describes the redundancy techniques for high-density DRAMs to solve the following two problems arisen with the increase in memory capacity: (1) the increase in memory-array division reduces the replacement flexibility between defective lines and spare lines; (2) the defects causing DC-characteristics faults, especially excessive standby current faults cannot be repaired with the conventional redundancy techniques. First, two approaches to solve the first problem are discussed: enhancing the replacement flexibility within the limits of intra-subarray replacement, and the introduction of inter-subarray replacement. Next, the recent proposals to solve the second problem are reported. The DC-characteristics faults are repaired through the modification of bitline precharge circuit or the subarray-replacement redundancy.
引用
收藏
页码:22 / 29
页数:8
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