On-chip tensile testing of the mechanical and electro-mechanical properties of nano-scale silicon free-standing beams

被引：1

作者：

Bhaskar, Umesh ^{[1
,2
]}

Passi, Vikram ^{[1
,2
]}

Zulfiqar, Azeem ^{[1
,2
]}

Sodervall, Ulf ^{[3
]}

Nilsson, Bengt ^{[3
]}

Petersson, Goran ^{[3
]}

Hagberg, Mats ^{[3
]}

Pardoen, Thomas ^{[1
,4
]}

Raskin, Jean-Pierre ^{[1
,2
]}

机构：

[1] Catholic Univ Louvain, Res Ctr Micro & Nanoscop Mat & Elect Devices, B-1348 Louvain, Belgium

[2] Catholic Univ Louvain, Inst Informat & commun Technol, Dept Elect Appl Math, B-1348 Louvain, Belgium

[3] Chalmers Univ Technol, Dept Microtechnol & NanoSci, Nanofabricat Lab, S-41296 Gothenburg, Sweden

[4] Catholic Univ Louvain, Inst Mech, Dept Mat & Civil Engn, B-1348 Louvain, Belgium

来源：

NANOSCALED SEMICONDUCTOR-ON-INSULATOR MATERIALS, SENSORS AND DEVICES | 2011年 / 276卷

关键词：

Fracture strength of silicon; piezoresistivity; on-chip tensile testing; mechanical and electro-mechanical properties of silicon; silicon nanowires; thin film testing; nano-mechanical testing; fracture; surface states; MEMS/NEMS; environmental impact on measurement; GIANT PIEZORESISTANCE; MICROSCOPY; MOBILITY; FRACTURE; STRESS;

D O I：

10.4028/www.scientific.net/AMR.276.117

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A simple and versatile on-chip tensile testing method is proposed for the statistical evaluation of size effects on the mechanical strength of silicon thin films along with the simultaneous study of (from low to ultra) strain effects on the carrier transport. Mechanical results are presented on the fracture strength of micro-nano scale silicon beams, followed with a discussion on interface states and problems facing reliable nano-electronic and nano-electromechanical characterizations.

引用

页码：117 / +

页数：4

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