Orbital embedding and topology of one-dimensional two-band insulators

被引:18
|
作者
Fuchs, Jean-Noel [1 ]
Piechon, Frederic [2 ]
机构
[1] Sorbonne Univ, CNRS, Lab Phys Theor Matiere Condensee, LPTMC, F-75005 Paris, France
[2] Univ Paris Saclay, CNRS, Lab Phys Solides, F-91405 Orsay, France
关键词
BERRYS PHASE; POLARIZATION; SOLITONS; STATES;
D O I
10.1103/PhysRevB.104.235428
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The topological invariants of band insulators are usually assumed to depend only on the connectivity between orbitals and not on their intracell position (orbital embedding), which is a separate piece of information in the tight-binding description. For example, in two dimensions, the orbital embedding is known to change the Berry curvature but not the Chern number. Here, we consider one-dimensional inversion-symmetric insulators classified by a Z2 topological invariant & thetasym; = 0 or pi, related to the Zak phase, and show that & thetasym; crucially depends on orbital embedding. We study three two-band models with bond, site, or mixed inversion: the Su-SchriefferHeeger model (SSH), the charge density wave model (CDW), and the Shockley model. The SSH (resp. CDW) model is found to have a unique phase with & thetasym; = 0 (resp. pi). However, the Shockley model features a topological phase transition between & thetasym; = 0 and pi. The key difference is whether the two orbitals per unit cell are at the same or different positions.
引用
收藏
页数:9
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