Many-Body Effects in Quantum Dot Laser Structures

被引：0
|
作者：
O'Driscoll, I. [1 ]
Hutchings, M. [1 ]
Smowton, P. M. [1 ]
Blood, P. [1 ]
机构：
[1] Cardiff Univ, Sch Phys & Astron, Cardiff CF24 3AA, S Glam, Wales
来源：
22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE | 2010年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Combining measurements of gain spectra in InAs dots and calculations of state-filling in the inhomogeneous distribution, the gain peak shifts due to many body interactions alone are up to 14 meV under lasing conditions.
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页码：39 / 40
页数：2
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