A Dual-Grating InGaAsP/InP DFB Laser Integrated With an SOA for THz Generation

被引：7
|
作者：
Deng, Qiufang [1 ,2 ]
Xu, Junjie [1 ,2 ]
Guo, Lu [1 ,2 ]
Liang, Song [1 ,2 ]
Hou, Lianping [3 ]
Zhu, Hongliang [1 ,2 ]
机构：
[1] Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Inst Semicond, Beijing 100083, Peoples R China
[3] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2016年 / 28卷 / 21期
基金：
中国国家自然科学基金;
关键词：
Dual-grating; THz; power balance; DISTRIBUTED-BRAGG-REFLECTOR; WAVE TERAHERTZ GENERATION; FEEDBACK LASER; MODE; RADIATION;
D O I：
10.1109/LPT.2016.2592505
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a dual-mode semiconductor laser that has two gratings with different periods below and above the active layer. A semiconductor optical amplifier (SOA), which is integrated with the dual-mode laser, plays an important role in balancing the optical power and reducing the linewidths of the emission modes. A stable two mode emission with the 13.92-nm spacing can be obtained over a wide range of distributed feedback and SOA injection currents. Compared with other types of dual-mode lasers, our device has the advantages of simple structure, compact size, and low fabrication cost.
引用
收藏
页码：2307 / 2310
页数：4
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