Design considerations for a-Si:H/SiGe/Si heterojunction bipolar transistors

被引：1

作者：

Della Corte, FG ^{[1
]}

Pezzimenti, F

机构：

[1] Univ Reggio Calabria, DIMET, Fac Engn, I-89100 Reggio Di Calabria, Italy

[2] CNR, Inst Microelect & Microsyst, I-80125 Naples, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 10期

关键词：

amorphous/crystalline heterojunction; amorphous silicon; a-Si : H/SiGe heterojunction; heterojunction bipolar transistor;

D O I：

10.1109/TED.2003.816104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A SiGe/Si heterojunction bipolar transistor (HBT) with a thin n(+) hydrogenated amorphous silicon (a-Si:H) emitter is discussed, in particular with reference to the dc current gain, by means of numerical simulations. The role of the fundamental geometric design parameters on the device performance is analyzed for a set of devices withstanding the same maximum emitter-collector voltage. It is shown that the emitter thickness has a minor effect on the device current gain, which is instead strongly influenced by the base thickness. However, due to the poor carrier mobility typical of a-Si:H, the total current handled by the device strongly depends on the emitter thickness and resistance. A dc current gain close to 10 000 can be predicted foe optimized a-Si:H/SiGe HBTs with a thin emitter and a narrow highly doped base.

引用

页码：2180 / 2182

页数：3

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