Chemisorption and decomposition of thiophene and furan on the Si(100)-2 x 1 surface: A quantum chemical study

被引:84
|
作者
Lu, X
Xu, X
Wang, NQ
Zhang, Q
Lin, MC
机构
[1] Emory Univ, Dept Chem, Atlanta, GA 30322 USA
[2] Emory Univ, Cherry L Emerson Ctr Sci Computat, Atlanta, GA 30322 USA
[3] Xiamen Univ, Dept Chem, Xiamen 361005, Peoples R China
[4] Xiamen Univ, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
来源
JOURNAL OF PHYSICAL CHEMISTRY B | 2001年 / 105卷 / 41期
关键词
D O I
10.1021/jp012254s
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The chemisorption and decomposition of thiophene (C4H4S) and furan (C4H4O) on the reconstructed Si(100)-2 x I surface has been investigated by means of the hybrid density functional (B3LYP) method in combination with a cluster model approach. Two chemisorption mechanisms, i.e., [4 + 2] and [2 + 2] cycloadditions of C4H4X (X = S,O) onto a surface dimer site, have been considered comparatively. The calculations revealed that the former process is barrierless and favorable over the latter, which requires a small activation energy (2.6 kcal/mol for thiophene and 1.2 kcal/mol for furan). The di-sigma bonded surface species formed by [4 + 2] cycloaddition-type chemisorption can either undergo further [2 + 2] cycloaddition with a neighboring Si=Si dimer site, giving rise to a tetra-sigma bonded surface species, or undergo deoxygenation (desulfurization) by transferring the heteroatom to a neighboring Si=Si dimer site, leading to a six-member ring metallocyclic C4H4Si2 surface species. The latter process was found to be slightly more favorable than the former, especially in the case of thiophene.
引用
收藏
页码:10069 / 10075
页数:7
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