Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction

被引：0

作者：

Toh, SL ^{[1
]}

Li, K ^{[1
]}

Ang, CH ^{[1
]}

Rao, R ^{[1
]}

Er, E ^{[1
]}

Loh, KP ^{[1
]}

Boothroyd, CB ^{[1
]}

Chan, L ^{[1
]}

机构：

[1] Chartered Semicond Mfg Ltd, Singapore 738406, Singapore

来源：

IPFA 2005: Proceedings of the 12th International Symposium on the Physical & Failure Analysis of Integrated Circuits | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have used both convergent beam electron diffraction (CBED) and high-resolution X-ray diffractometry (HRXRD) to investigate the influence of different graded layer thicknesses on the overall and interfacial strain phenomena in the SiGe/Si heterostructures. Broadening of the higher order Laue zone (HOLZ) reflections is often observed at the interface, and contains information relating to the lattice behaviour. These results, when considered and correlated with the plots from HRXRD, allow us to predict the optimized relaxation mechanisms taking place at the interfacial regions.

引用

页码：302 / 305

页数：4

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