Theoretical study of alpha-particle-induced soft errors in submicron SOI SRAM

被引：0
|
作者：
Tosaka, Y
Suzuki, K
Satoh, S
Sugii, T
机构：
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 1996年 / E79C卷 / 06期
关键词：
soft errors; SOI SRAM; alpha-particle-induced bipolar current; critical alpha-particle-induced initial charge; soft error rate;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of alpha-particle-induced parasitic bipolar current on soft errors in submicron 6-transistor SOI SRAMs were numericaly studied. It was shown that the bipolar current induces soft errors and that there exists a critical quantity which determines the soft error occurrence in the SOI SRAMs. Simulated soft error rates were in the same order as those for bulk SRAMs.
引用
收藏
页码：767 / 771
页数：5
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